H71.00343. Interface and spintronic device characteristics of layered insulators (BN, Bi 2 Se 3 ) grown in amorphous form using magnetron sputtering

Presented by: Yub Raj Sapkota


Abstract

The last two decades have witnessed the emergence of several layered insulators such as hexagonal Boron nitride (BN) and Topological Insulator Bismuth selenide (Bi 2 Se 3 ). Their application in spintronics is still an active area of research. In this work, we have investigated the interface, transport, and magnetotransport properties of amorphous BN and Bi 2 Se 3 in a tunnel magnetoresistance geometry with ferromagnetic Cobalt layers. We observed tunneling and magnetoresistance behavior with BN barriers, whereas interdiffusion issues likely impeded the observation of magnetoresistance effect with insulating Bi2 Se3

Authors

  • Yub Raj Sapkota
  • Duston Wetzel and Dipanjan Mazumdar


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