L62.00009. Development of single-electron and single-electron-pair sources in LaAlO3/SrTiO3 nanostructures

Presented by: Yang Hu


Abstract

A source of single electrons can be realized by coupling quantum dots with tunnel barriers [1]. The 2D electron gas at the LaAlO3/SrTiO3 interface can be patterned using conductive atomic force microscope (c-AFM) lithography [2], which has been used to create quantum dots and single electron transistors [3]. We aim to use this technique to create an on-demand single-electron source by sketching quantum dots and applying out-of-phase excitation across the dot array. We discuss results for a triple-dot device and their associated electron tunneling phenomenon and issues related to the individual tunabilities of the dots. These devices may have application to quantum computation and simulation, and could also provide a robust standard for the electric unit ampere.[1] H. Pothier et al, EPL 17, 249 (1992).[2] C. Cen et al, Nature Mater. 7, 298 (2008).[3] G. Cheng et al, Nature Nanotechnology 6, 343 (2011).

Authors

  • Yang Hu
  • Yuhe Tang
  • Dengyu Yang
  • Yun-Yi Pai
  • Jianan Li
  • Hyungwoo Lee
  • Jung-Woo Lee
  • Chang-Beom Eom
  • Patrick Irvin
  • Jeremy Levy


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